BAV756S |
RFQ for BAV756S Required Field |
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| Product | Manufacturers | Pack | D/C |
| BAV756S | - | SOT363 | - |
The BAV756S consists of four high-speed switching diodes fabricated in planar technology, and encapsulated in the small SMD SOT363 plastic package. One pair of diodes has a common cathode; the other pair has a common anode.
Typical Application |
Features |
| · General purpose switching in e.g. surface mounted circuits. | · Small plastic SMD package· High switching speed: max. 4 ns· Continuous reverse voltage: max. 75 V· Repetitive peak reverse voltage: max. 85 V· Repetitive peak forward current: max. 450 mA. |
| Symbol | Parameter | Conditions | Min | Max | Unit |
| Per diode | |||||
| VRRM | repetitive peak reverse voltage | - | 85 | V | |
| VR | continuous reverse voltage | - | 75 | V | |
| IF | continuous forward current | single diode loaded; see Fig.2; note 1 |
- | 250 | mA |
| double diode loaded; see Fig.2; note 1 |
- | 100 | mA | ||
| IFRM | repetitive peak forward current | - | 450 | mA | |
| IFSM | non-repetitive peak forward curren | square wave; Tj = 25 prior to surge; see Fig.4 t = 1 s t = 1 ms t = 1 s |
- - - |
4 1 0.5 |
A A A |
| Ptot | total power dissipation | TS = 25 °C; note 1 | - | 350 | mW |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | junction temperature | -65 | 150 | ||
